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|Title:||High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications||Authors:||Hu, H.
|Issue Date:||2003||Citation:||Hu, H.,Ding, S.-J.,Lim, H.F.,Zhu, C.,Li, M.F.,Kim, S.J.,Yu, X.F.,Chen, J.H.,Yong, Y.F.,Cho, B.J.,Chan, D.S.H.,Rustagi, S.C.,Yu, M.B.,Tung, C.H.,Du, A.,My, D.,Foo, P.D.,Chin, A.,Kwong, D.-L. (2003). High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications. Technical Digest - International Electron Devices Meeting : 379-382. ScholarBank@NUS Repository.||Abstract:||In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.||Source Title:||Technical Digest - International Electron Devices Meeting||URI:||http://scholarbank.nus.edu.sg/handle/10635/83782||ISSN:||01631918|
|Appears in Collections:||Staff Publications|
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