Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83782
Title: High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications
Authors: Hu, H.
Ding, S.-J. 
Lim, H.F. 
Zhu, C. 
Li, M.F. 
Kim, S.J. 
Yu, X.F.
Chen, J.H. 
Yong, Y.F.
Cho, B.J. 
Chan, D.S.H. 
Rustagi, S.C.
Yu, M.B.
Tung, C.H.
Du, A.
My, D.
Foo, P.D.
Chin, A.
Kwong, D.-L.
Issue Date: 2003
Source: Hu, H.,Ding, S.-J.,Lim, H.F.,Zhu, C.,Li, M.F.,Kim, S.J.,Yu, X.F.,Chen, J.H.,Yong, Y.F.,Cho, B.J.,Chan, D.S.H.,Rustagi, S.C.,Yu, M.B.,Tung, C.H.,Du, A.,My, D.,Foo, P.D.,Chin, A.,Kwong, D.-L. (2003). High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications. Technical Digest - International Electron Devices Meeting : 379-382. ScholarBank@NUS Repository.
Abstract: In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.
Source Title: Technical Digest - International Electron Devices Meeting
URI: http://scholarbank.nus.edu.sg/handle/10635/83782
ISSN: 01631918
Appears in Collections:Staff Publications

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