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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83782
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dc.titleHigh Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications
dc.contributor.authorHu, H.
dc.contributor.authorDing, S.-J.
dc.contributor.authorLim, H.F.
dc.contributor.authorZhu, C.
dc.contributor.authorLi, M.F.
dc.contributor.authorKim, S.J.
dc.contributor.authorYu, X.F.
dc.contributor.authorChen, J.H.
dc.contributor.authorYong, Y.F.
dc.contributor.authorCho, B.J.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorRustagi, S.C.
dc.contributor.authorYu, M.B.
dc.contributor.authorTung, C.H.
dc.contributor.authorDu, A.
dc.contributor.authorMy, D.
dc.contributor.authorFoo, P.D.
dc.contributor.authorChin, A.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:45:07Z
dc.date.available2014-10-07T04:45:07Z
dc.date.issued2003
dc.identifier.citationHu, H.,Ding, S.-J.,Lim, H.F.,Zhu, C.,Li, M.F.,Kim, S.J.,Yu, X.F.,Chen, J.H.,Yong, Y.F.,Cho, B.J.,Chan, D.S.H.,Rustagi, S.C.,Yu, M.B.,Tung, C.H.,Du, A.,My, D.,Foo, P.D.,Chin, A.,Kwong, D.-L. (2003). High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications. Technical Digest - International Electron Devices Meeting : 379-382. ScholarBank@NUS Repository.
dc.identifier.issn01631918
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83782
dc.description.abstractIn this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleTechnical Digest - International Electron Devices Meeting
dc.description.page379-382
dc.description.codenTDIMD
dc.identifier.isiutNOT_IN_WOS
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