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| Title: | High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications | Authors: | Hu, H. Ding, S.-J. Lim, H.F. Zhu, C. Li, M.F. Kim, S.J. Yu, X.F. Chen, J.H. Yong, Y.F. Cho, B.J. Chan, D.S.H. Rustagi, S.C. Yu, M.B. Tung, C.H. Du, A. My, D. Foo, P.D. Chin, A. Kwong, D.-L. |
Issue Date: | 2003 | Citation: | Hu, H.,Ding, S.-J.,Lim, H.F.,Zhu, C.,Li, M.F.,Kim, S.J.,Yu, X.F.,Chen, J.H.,Yong, Y.F.,Cho, B.J.,Chan, D.S.H.,Rustagi, S.C.,Yu, M.B.,Tung, C.H.,Du, A.,My, D.,Foo, P.D.,Chin, A.,Kwong, D.-L. (2003). High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications. Technical Digest - International Electron Devices Meeting : 379-382. ScholarBank@NUS Repository. | Abstract: | In this paper, high performance ALD HfO 2-Al 2O 3 laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm 2 from 10 kHz to 20 GHz, low leakage current of 7.45×10 -9 A/cm 2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO 2-Al 2O 3 laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications. | Source Title: | Technical Digest - International Electron Devices Meeting | URI: | http://scholarbank.nus.edu.sg/handle/10635/83782 | ISSN: | 01631918 |
| Appears in Collections: | Staff Publications |
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