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Title: Narrow-band band-pass filters on silicon substrates at 30 GHz
Authors: Yu, D.S.
Cheng, C.F.
Chan, K.T.
Chin, A.
McAlister, S.P.
Zhu, C. 
Li, M.F. 
Kwong, D.L.
Issue Date: 2004
Citation: Yu, D.S.,Cheng, C.F.,Chan, K.T.,Chin, A.,McAlister, S.P.,Zhu, C.,Li, M.F.,Kwong, D.L. (2004). Narrow-band band-pass filters on silicon substrates at 30 GHz. IEEE MTT-S International Microwave Symposium Digest 3 : 1467-1470. ScholarBank@NUS Repository.
Abstract: Using optimized ion implantation, we have fabricated high performance 2-pole and 3-pole CPW filters on Si substrates at ∼30 GHz, with very narrow 1.0 (3.1%) GHz and 0.75 (2.5%) GHz pass-band as well as small insertion loss. Microstrip filters en Si show small 3,2 dB loss at 27 GHz, which has smaller size than CPW case without the large coplanar ground planes. In contrast, the non-implanted filters failed due to the high substrate loss.
Source Title: IEEE MTT-S International Microwave Symposium Digest
ISSN: 0149645X
Appears in Collections:Staff Publications

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