Please use this identifier to cite or link to this item:
Title: MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics
Authors: Hu, H.
Zhu, C. 
Yu, X.
Chin, A. 
Li, M.F. 
Cho, B.J. 
Kwong, D.-L.
Foo, P.D.
Yu, M.B.
Liu, X.
Winkler, J.
Keywords: Dispersion
Metal-insulator-metal (MIM) capacitor
Thin-film devices
Voltage linearity
Issue Date: Feb-2003
Citation: Hu, H., Zhu, C., Yu, X., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B., Liu, X., Winkler, J. (2003-02). MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics. IEEE Electron Device Letters 24 (2) : 60-62. ScholarBank@NUS Repository.
Abstract: The metal-insulator-metal (MIM) capacitors with (HfO2)1-x(Al2O3)x high-κ dielectric films were investigated for the first time. The results show that both the capacitance density and voltage/temperature coefficients of capacitance (VCC/TCC) values decrease with increasing the mole fraction of Al2O3. It was demonstrated that the (HfO2)1-x(Al2O3)x MIM capacitor with a Al2O3 mole fraction of 0.14 is optimized. It provides a high capacitance density (3.5 fFμm2) and low VCC values (∼ 140ppm/V2) at the same time. In addition, small frequency dependence, low loss tangent, and low leakage current are also obtained. Also, no electrical degradation was observed for (HfO2)1-x(Al2O3)x MIM capacitors after N2 annealing at 400 °C. All these show that the (HfO2)0.86(Al2O3)0.14 MIM capacitor is very suitable for the capacitor applications within the thermal budget of the back end of line process.
Source Title: IEEE Electron Device Letters
ISSN: 07413106
DOI: 10.1109/LED.2002.807703
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Feb 2, 2023


checked on Feb 2, 2023

Page view(s)

checked on Feb 2, 2023

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.