A flexible polymer memory device

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.orgel.2007.02.002

Title:	A flexible polymer memory device
Authors:	Li, L. Ling, Q.-D. Lim, S.-L. Tan, Y.-P. Zhu, C. Chan, D.S.H. Kang, E.-T. Neoh, K.-G.
Keywords:	Flexible memory device Lanthanide polymer complex Polypyrrole WORM
Issue Date:	Aug-2007
Citation:	Li, L., Ling, Q.-D., Lim, S.-L., Tan, Y.-P., Zhu, C., Chan, D.S.H., Kang, E.-T., Neoh, K.-G. (2007-08). A flexible polymer memory device. Organic Electronics: physics, materials, applications 8 (4) : 401-406. ScholarBank@NUS Repository. https://doi.org/10.1016/j.orgel.2007.02.002
Abstract:	A flexible polymer memory device is demonstrated in a sandwich structure of polypyrrole/P6FBEu/Au. Conductance switching at a voltage of about 4 V, with an ON/OFF current ratio up to 200, was observed in this flexible memory device. At the low-conductivity state, current density-voltage (J-V) characteristics of the device were dominated by a charge injection current. At the high conductivity state, J-V characteristics were dominated by a space-charge-limited current. Both the ON and OFF states are stable up to 106 read cycles at a read voltage of 1 V. The device can be used as a write-once read-many-times (WORM) memory with good electronic stability. © 2007 Elsevier B.V. All rights reserved.
Source Title:	Organic Electronics: physics, materials, applications
URI:	http://scholarbank.nus.edu.sg/handle/10635/81869
ISSN:	15661199
DOI:	10.1016/j.orgel.2007.02.002
Appears in Collections:	Staff Publications

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