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|Title:||A flexible polymer memory device||Authors:||Li, L.
|Keywords:||Flexible memory device
Lanthanide polymer complex
|Issue Date:||Aug-2007||Citation:||Li, L., Ling, Q.-D., Lim, S.-L., Tan, Y.-P., Zhu, C., Chan, D.S.H., Kang, E.-T., Neoh, K.-G. (2007-08). A flexible polymer memory device. Organic Electronics: physics, materials, applications 8 (4) : 401-406. ScholarBank@NUS Repository. https://doi.org/10.1016/j.orgel.2007.02.002||Abstract:||A flexible polymer memory device is demonstrated in a sandwich structure of polypyrrole/P6FBEu/Au. Conductance switching at a voltage of about 4 V, with an ON/OFF current ratio up to 200, was observed in this flexible memory device. At the low-conductivity state, current density-voltage (J-V) characteristics of the device were dominated by a charge injection current. At the high conductivity state, J-V characteristics were dominated by a space-charge-limited current. Both the ON and OFF states are stable up to 106 read cycles at a read voltage of 1 V. The device can be used as a write-once read-many-times (WORM) memory with good electronic stability. © 2007 Elsevier B.V. All rights reserved.||Source Title:||Organic Electronics: physics, materials, applications||URI:||http://scholarbank.nus.edu.sg/handle/10635/81869||ISSN:||15661199||DOI:||10.1016/j.orgel.2007.02.002|
|Appears in Collections:||Staff Publications|
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