A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.833842

Title:	A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation
Authors:	Wu, N. Zhang, Q. Zhu, C. Chan, D.S.H. Du, A. Balasubramanian, N. Li, M.F. Chin, A. Sin, J.K.O. Kwong, D.-L.
Issue Date:	Sep-2004
Citation:	Wu, N., Zhang, Q., Zhu, C., Chan, D.S.H., Du, A., Balasubramanian, N., Li, M.F., Chin, A., Sin, J.K.O., Kwong, D.-L. (2004-09). A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation. IEEE Electron Device Letters 25 (9) : 631-633. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.833842
Abstract:	In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a ∼ 140% higher peak mobility than that of the device with surface nitridation. © 2004 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/81918
ISSN:	07413106
DOI:	10.1109/LED.2004.833842
Appears in Collections:	Staff Publications

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