Please use this identifier to cite or link to this item:
|Title:||A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation||Authors:||Wu, N.
|Issue Date:||Sep-2004||Citation:||Wu, N., Zhang, Q., Zhu, C., Chan, D.S.H., Du, A., Balasubramanian, N., Li, M.F., Chin, A., Sin, J.K.O., Kwong, D.-L. (2004-09). A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation. IEEE Electron Device Letters 25 (9) : 631-633. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.833842||Abstract:||In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a ∼ 140% higher peak mobility than that of the device with surface nitridation. © 2004 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81918||ISSN:||07413106||DOI:||10.1109/LED.2004.833842|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 17, 2021
WEB OF SCIENCETM
checked on Jun 8, 2021
checked on Jun 9, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.