Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.833842
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dc.titleA TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation
dc.contributor.authorWu, N.
dc.contributor.authorZhang, Q.
dc.contributor.authorZhu, C.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorDu, A.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorLi, M.F.
dc.contributor.authorChin, A.
dc.contributor.authorSin, J.K.O.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:23:13Z
dc.date.available2014-10-07T04:23:13Z
dc.date.issued2004-09
dc.identifier.citationWu, N., Zhang, Q., Zhu, C., Chan, D.S.H., Du, A., Balasubramanian, N., Li, M.F., Chin, A., Sin, J.K.O., Kwong, D.-L. (2004-09). A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation. IEEE Electron Device Letters 25 (9) : 631-633. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.833842
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81918
dc.description.abstractIn this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a ∼ 140% higher peak mobility than that of the device with surface nitridation. © 2004 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2004.833842
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2004.833842
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume25
dc.description.issue9
dc.description.page631-633
dc.description.codenEDLED
dc.identifier.isiut000223577600014
Appears in Collections:Staff Publications

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