Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.833842
DC FieldValue
dc.titleA TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation
dc.contributor.authorWu, N.
dc.contributor.authorZhang, Q.
dc.contributor.authorZhu, C.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorDu, A.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorLi, M.F.
dc.contributor.authorChin, A.
dc.contributor.authorSin, J.K.O.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:23:13Z
dc.date.available2014-10-07T04:23:13Z
dc.date.issued2004-09
dc.identifier.citationWu, N., Zhang, Q., Zhu, C., Chan, D.S.H., Du, A., Balasubramanian, N., Li, M.F., Chin, A., Sin, J.K.O., Kwong, D.-L. (2004-09). A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation. IEEE Electron Device Letters 25 (9) : 631-633. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.833842
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81918
dc.description.abstractIn this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a ∼ 140% higher peak mobility than that of the device with surface nitridation. © 2004 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2004.833842
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2004.833842
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume25
dc.description.issue9
dc.description.page631-633
dc.description.codenEDLED
dc.identifier.isiut000223577600014
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

121
checked on May 18, 2022

WEB OF SCIENCETM
Citations

108
checked on May 18, 2022

Page view(s)

179
checked on May 12, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.