Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2004.833842
DC Field | Value | |
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dc.title | A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation | |
dc.contributor.author | Wu, N. | |
dc.contributor.author | Zhang, Q. | |
dc.contributor.author | Zhu, C. | |
dc.contributor.author | Chan, D.S.H. | |
dc.contributor.author | Du, A. | |
dc.contributor.author | Balasubramanian, N. | |
dc.contributor.author | Li, M.F. | |
dc.contributor.author | Chin, A. | |
dc.contributor.author | Sin, J.K.O. | |
dc.contributor.author | Kwong, D.-L. | |
dc.date.accessioned | 2014-10-07T04:23:13Z | |
dc.date.available | 2014-10-07T04:23:13Z | |
dc.date.issued | 2004-09 | |
dc.identifier.citation | Wu, N., Zhang, Q., Zhu, C., Chan, D.S.H., Du, A., Balasubramanian, N., Li, M.F., Chin, A., Sin, J.K.O., Kwong, D.-L. (2004-09). A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation. IEEE Electron Device Letters 25 (9) : 631-633. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.833842 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81918 | |
dc.description.abstract | In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a ∼ 140% higher peak mobility than that of the device with surface nitridation. © 2004 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2004.833842 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2004.833842 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 25 | |
dc.description.issue | 9 | |
dc.description.page | 631-633 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000223577600014 | |
Appears in Collections: | Staff Publications |
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