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|Title:||A novel surface passivation process for HfO 2 Ge MOSFETs||Authors:||Wu, N.
|Issue Date:||2004||Citation:||Wu, N.,Zhang, Q.,Zhu, C.,Chan, D.S.H.,Li, M.F.,Balasubramanian, N.,Du, A.Y.,Chin, A.,Sin, J.K.O.,Kwong, D.-L. (2004). A novel surface passivation process for HfO 2 Ge MOSFETs. Device Research Conference - Conference Digest, DRC : 19-20. ScholarBank@NUS Repository. https://doi.org/10.1109/DRC.2004.1367762||Abstract:||A novel surface passivation method was developed for HfO 2 Ge MOSFETs using in situ SiH 4 treatment prior to HfO 2 deposition. Ge offers significant enhancements in bulk electron and hole mobility relative to silicon. Surface treatment using NH 3 nitridation of Ge is a key step in the demonstration of HfO 2 Ge MOSFETs. The incorporation of nitrogen at the HfO 2/Ge interface has the potential of degrading the channel mobility.||Source Title:||Device Research Conference - Conference Digest, DRC||URI:||http://scholarbank.nus.edu.sg/handle/10635/83406||ISBN:||0780382846||ISSN:||15483770||DOI:||10.1109/DRC.2004.1367762|
|Appears in Collections:||Staff Publications|
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