Please use this identifier to cite or link to this item:
Title: A novel surface passivation process for HfO 2 Ge MOSFETs
Authors: Wu, N.
Zhang, Q.
Zhu, C. 
Chan, D.S.H. 
Li, M.F. 
Balasubramanian, N.
Du, A.Y.
Chin, A.
Sin, J.K.O.
Kwong, D.-L.
Issue Date: 2004
Citation: Wu, N.,Zhang, Q.,Zhu, C.,Chan, D.S.H.,Li, M.F.,Balasubramanian, N.,Du, A.Y.,Chin, A.,Sin, J.K.O.,Kwong, D.-L. (2004). A novel surface passivation process for HfO 2 Ge MOSFETs. Device Research Conference - Conference Digest, DRC : 19-20. ScholarBank@NUS Repository.
Abstract: A novel surface passivation method was developed for HfO 2 Ge MOSFETs using in situ SiH 4 treatment prior to HfO 2 deposition. Ge offers significant enhancements in bulk electron and hole mobility relative to silicon. Surface treatment using NH 3 nitridation of Ge is a key step in the demonstration of HfO 2 Ge MOSFETs. The incorporation of nitrogen at the HfO 2/Ge interface has the potential of degrading the channel mobility.
Source Title: Device Research Conference - Conference Digest, DRC
ISBN: 0780382846
ISSN: 15483770
DOI: 10.1109/DRC.2004.1367762
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Dec 29, 2019

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.