Please use this identifier to cite or link to this item: https://doi.org/10.1109/DRC.2004.1367762
Title: A novel surface passivation process for HfO 2 Ge MOSFETs
Authors: Wu, N.
Zhang, Q.
Zhu, C. 
Chan, D.S.H. 
Li, M.F. 
Balasubramanian, N.
Du, A.Y.
Chin, A.
Sin, J.K.O.
Kwong, D.-L.
Issue Date: 2004
Source: Wu, N.,Zhang, Q.,Zhu, C.,Chan, D.S.H.,Li, M.F.,Balasubramanian, N.,Du, A.Y.,Chin, A.,Sin, J.K.O.,Kwong, D.-L. (2004). A novel surface passivation process for HfO 2 Ge MOSFETs. Device Research Conference - Conference Digest, DRC : 19-20. ScholarBank@NUS Repository. https://doi.org/10.1109/DRC.2004.1367762
Abstract: A novel surface passivation method was developed for HfO 2 Ge MOSFETs using in situ SiH 4 treatment prior to HfO 2 deposition. Ge offers significant enhancements in bulk electron and hole mobility relative to silicon. Surface treatment using NH 3 nitridation of Ge is a key step in the demonstration of HfO 2 Ge MOSFETs. The incorporation of nitrogen at the HfO 2/Ge interface has the potential of degrading the channel mobility.
Source Title: Device Research Conference - Conference Digest, DRC
URI: http://scholarbank.nus.edu.sg/handle/10635/83406
ISBN: 0780382846
ISSN: 15483770
DOI: 10.1109/DRC.2004.1367762
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