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Please use this identifier to cite or link to this item: https://doi.org/10.1109/DRC.2004.1367762
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dc.titleA novel surface passivation process for HfO 2 Ge MOSFETs
dc.contributor.authorWu, N.
dc.contributor.authorZhang, Q.
dc.contributor.authorZhu, C.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorLi, M.F.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorDu, A.Y.
dc.contributor.authorChin, A.
dc.contributor.authorSin, J.K.O.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:40:53Z
dc.date.available2014-10-07T04:40:53Z
dc.date.issued2004
dc.identifier.citationWu, N.,Zhang, Q.,Zhu, C.,Chan, D.S.H.,Li, M.F.,Balasubramanian, N.,Du, A.Y.,Chin, A.,Sin, J.K.O.,Kwong, D.-L. (2004). A novel surface passivation process for HfO 2 Ge MOSFETs. Device Research Conference - Conference Digest, DRC : 19-20. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/DRC.2004.1367762" target="_blank">https://doi.org/10.1109/DRC.2004.1367762</a>
dc.identifier.isbn0780382846
dc.identifier.issn15483770
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83406
dc.description.abstractA novel surface passivation method was developed for HfO 2 Ge MOSFETs using in situ SiH 4 treatment prior to HfO 2 deposition. Ge offers significant enhancements in bulk electron and hole mobility relative to silicon. Surface treatment using NH 3 nitridation of Ge is a key step in the demonstration of HfO 2 Ge MOSFETs. The incorporation of nitrogen at the HfO 2/Ge interface has the potential of degrading the channel mobility.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/DRC.2004.1367762
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/DRC.2004.1367762
dc.description.sourcetitleDevice Research Conference - Conference Digest, DRC
dc.description.page19-20
dc.identifier.isiutNOT_IN_WOS
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