A novel surface passivation process for HfO 2 Ge MOSFETs

Please use this identifier to cite or link to this item: https://doi.org/10.1109/DRC.2004.1367762

Title:	A novel surface passivation process for HfO 2 Ge MOSFETs
Authors:	Wu, N. Zhang, Q. Zhu, C. Chan, D.S.H. Li, M.F. Balasubramanian, N. Du, A.Y. Chin, A. Sin, J.K.O. Kwong, D.-L.
Issue Date:	2004
Citation:	Wu, N.,Zhang, Q.,Zhu, C.,Chan, D.S.H.,Li, M.F.,Balasubramanian, N.,Du, A.Y.,Chin, A.,Sin, J.K.O.,Kwong, D.-L. (2004). A novel surface passivation process for HfO 2 Ge MOSFETs. Device Research Conference - Conference Digest, DRC : 19-20. ScholarBank@NUS Repository. https://doi.org/10.1109/DRC.2004.1367762
Abstract:	A novel surface passivation method was developed for HfO 2 Ge MOSFETs using in situ SiH 4 treatment prior to HfO 2 deposition. Ge offers significant enhancements in bulk electron and hole mobility relative to silicon. Surface treatment using NH 3 nitridation of Ge is a key step in the demonstration of HfO 2 Ge MOSFETs. The incorporation of nitrogen at the HfO 2/Ge interface has the potential of degrading the channel mobility.
Source Title:	Device Research Conference - Conference Digest, DRC
URI:	http://scholarbank.nus.edu.sg/handle/10635/83406
ISBN:	0780382846
ISSN:	15483770
DOI:	10.1109/DRC.2004.1367762
Appears in Collections:	Staff Publications

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