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|Title:||Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)||Authors:||Lee, R.T.P.
|Issue Date:||2009||Citation:||Lee, R.T.P., Chi, D.Z., Yeo, Y.-C. (2009). Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs). IEEE Transactions on Electron Devices 56 (7) : 1458-1465. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2021351||Abstract:||In this paper, platinum germanosilicide (PtSiGe) was investigated extensively as an alternative to nickel germanosilicide (NiSiGe) for contact formation on silicon-germanium (SiGe) source/drain (S/D) stressors. We show that PtSiGe has superior thermal and morphological stability as compared to NiSiGe. Our results further show that the formation of PtSiGe yields a low hole barrier height ΦB P of 215 meV in a self-aligned process. We also demonstrated the integration of PtSiGe contacts in FinFET devices. FinFETs with PtSiGe contacts achieve a 27% reduction in external resistance (REXT compared to FinFETs with NiSiGe contacts. Statistical comparison reveals that the drive current performance is enhanced by 21% while maintaining comparable control of short-channel effects. These results illustrate the potential of forming contacts with low Schottky barrier heights using PtSiGe in strained transistors with SiGe S/D stressors, thereby reducing REXT and extending transistor performance. © 2009 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/82918||ISSN:||00189383||DOI:||10.1109/TED.2009.2021351|
|Appears in Collections:||Staff Publications|
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