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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

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Date Issued:  [2000 TO 2023]
Type:  Article

Results 121-140 of 236 (Search time: 0.01 seconds).

Issue DateTitleAuthor(s)
1212009Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETsChin, H.-C.; Gong, X.; Liu, X.; Yeo, Y.-C. 
1222-May-2011Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristicsLiu, X.; Liu, B.; Low, E.K.F.; Liu, W.; Yang, M.; Tan, L.-S. ; Teo, K.L. ; Yeo, Y.-C. 
1232008Low Schottky barrier height for silicides on n -type Si (100) by interfacial selenium segregation during silicidationWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
124Sep-2004Metal gate technology for nanoscale transistors - Material selection and process integration issuesYeo, Y.-C. 
1252007Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layersLim, A.E.-J.; Hwang, W.S.; Wang, X.P.; Lai, D.M.Y.; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C. 
126Nov-2005Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETsLow, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Kwong, D.-L.
127Dec-2011Modeling the negative quadratic VCC of SiO2 in MIM capacitorPhung, T.H.; Steinmann, P.; Wise, R.; Yeo, Y.-C. ; Zhu, C. 
128Aug-2008Modification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interfaceLim, A.E.-J.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C. 
129Feb-2012Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier LayersGyanathan, A.; Yeo, Y.-C. 
13015-Dec-2011Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layerGyanathan, A.; Yeo, Y.-C. 
1312012Multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contactsZhang, X.; Guo, H.X.; Gong, X.; Yeo, Y.-C. 
132Nov-2007N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layerLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
133Feb-2007N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicideLee, R.T.P. ; Lim, A.E.-J.; Tan, K.-M.; Liow, T.-Y.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
134Nov-2012N-channel InGaAs field-effect transistors formed on germanium-on-insulator substratesIvana; Subramanian, S.; Owen, M.H.S.; Tan, K.H.; Loke, W.K.; Wicaksono, S.; Yoon, S.F.; Yeo, Y.-C. 
1352008N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxyKoh, S.-M.; Sekar, K.; Lee, D.; Krull, W.; Wang, X.; Samudra, G.S. ; Yeo, Y.-C. 
136Feb-2007n-MOSFET with silicon-carbon source/drain for enhancement of carrier transportChui, K.-J.; Ang, K.-W.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
1372008N-xhannel GaAs MOSFET with TaNHfAlO gate stack formed using in situ vacuum anneal and silane passivationChin, H.-C.; Zhu, M. ; Samudra, G.S. ; Yeo, Y.-C. 
13815-Jul-2010Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowiresChin, H.-C.; Gong, X.; Ng, T.K.; Loke, W.K.; Wong, C.P.; Shen, Z.; Wicaksono, S.; Yoon, S.F.; Yeo, Y.-C. 
1392009NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stressLiu, B.; Tan, K.-M.; Yang, M.; Yeo, Y.-C. 
140Sep-2011Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectricsTran, X.A.; Yu, H.Y.; Gao, B.; Kang, J.F.; Sun, X.W.; Yeo, Y.-C. ; Nguyen, B.Y.; Li, M.F.