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https://doi.org/10.1109/LED.2008.2005648
Title: | N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy | Authors: | Koh, S.-M. Sekar, K. Lee, D. Krull, W. Wang, X. Samudra, G.S. Yeo, Y.-C. |
Keywords: | Laser anneal Molecular carbon Silicon carbon Solid phase epitaxy (SPE) Strain |
Issue Date: | 2008 | Citation: | Koh, S.-M., Sekar, K., Lee, D., Krull, W., Wang, X., Samudra, G.S., Yeo, Y.-C. (2008). N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy. IEEE Electron Device Letters 29 (12) : 1315-1318. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2005648 | Abstract: | In this letter, we report the use of a novel cluster-carbon C7 H7 +) implant and pulsed-excimer-laser-induced solid-phase-epitaxy technique to form embedded silicon-carbon (Si:C) source/drain (S/D) stressors. A substitutional carbon concentration Csub of ∼1.1% was obtained in this letter. N-channel MOSFETs (n-FETs) integrated with embedded silicon-carbon (Si:C) S/D stressors formed using the novel cluster-carbon implant and pulsed-laser-anneal technique demonstrate improvement in current drive of 14% over control n-FETs formed with Si preamorphization implant. IOFF-IDSAT comparison shows a 15% IDSAT enhancement for n-FETs with embedded Si:C S/D at an IOFF = 1 nA μm despite a slightly higher series resistance. © 2008 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82749 | ISSN: | 07413106 | DOI: | 10.1109/LED.2008.2005648 |
Appears in Collections: | Staff Publications |
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