N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy

Abstract

In this letter, we report the use of a novel cluster-carbon C7 H7 +) implant and pulsed-excimer-laser-induced solid-phase-epitaxy technique to form embedded silicon-carbon (Si:C) source/drain (S/D) stressors. A substitutional carbon concentration Csub of ∼1.1% was obtained in this letter. N-channel MOSFETs (n-FETs) integrated with embedded silicon-carbon (Si:C) S/D stressors formed using the novel cluster-carbon implant and pulsed-laser-anneal technique demonstrate improvement in current drive of 14% over control n-FETs formed with Si preamorphization implant. IOFF-IDSAT comparison shows a 15% IDSAT enhancement for n-FETs with embedded Si:C S/D at an IOFF = 1 nA μm despite a slightly higher series resistance. © 2008 IEEE.