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|Title:||Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics||Authors:||Liu, X.
|Issue Date:||2-May-2011||Citation:||Liu, X., Liu, B., Low, E.K.F., Liu, W., Yang, M., Tan, L.-S., Teo, K.L., Yeo, Y.-C. (2011-05-02). Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics. Applied Physics Letters 98 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3584856||Abstract:||The device physics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) with localized stress introduced by a diamond-like carbon (DLC) liner or encapsulation layer was investigated. DLC film with high intrinsic compressive stress (∼6GPa) formed over AlGaN/GaN MOS-HEMTs contributed local compressive stress in the channel region. This was found to reduce the two-dimensional electron gas (2-DEG) density in the channel, leading to a positive threshold voltage shift. Transconductance and drain current at a given gate overdrive were also improved. On the other hand, the DLC introduced local tensile stress in the region between the gate and source/drain contacts, leading to a localized increase in 2-DEG density, giving reduced series resistance. The results of this work are expected to be useful for strain engineering of AlGaN/GaN MOS-HEMTs. © 2011 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/56512||ISSN:||00036951||DOI:||10.1063/1.3584856|
|Appears in Collections:||Staff Publications|
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