Please use this identifier to cite or link to this item:
Title: Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers
Authors: Gyanathan, A.
Yeo, Y.-C. 
Issue Date: Feb-2012
Citation: Gyanathan, A., Yeo, Y.-C. (2012-02). Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository.
Abstract: This work compares the effects of SiN and Ta 2O 5 barrier layers in a multi-level phase change random access memory (PCRAM) cell. The PCRAM cell comprises a phase change material stack between a top and a bottom electrode. The phase change material stack comprises a nitrogendoped Ge 2Sb 2Te 5 (NGST) layer on top of a thin barrier layer on an undoped GST layer. The thermal conductivity and electrical resistivity of the barrier layer affect multi-level switching performance in terms of endurance as well as power consumption. Extensive electrical characterization was performed on these PCRAM multi-level devices. Thermal analysis was also performed to investigate the thermal efficiency of each barrier layer. It was observed that for a constant barrier layer thickness of 1.5 nm, the endurance of the multi-level device with the SiN barrier layer was better than that with the Ta 2O 5 barrier layer; however, the multi-level device with the Ta 2O 5 barrier layer had a lower power consumption than that with the SiN barrier layer. © 2012 The Japan Society of Applied Physics.
Source Title: Japanese Journal of Applied Physics
ISSN: 00214922
DOI: 10.1143/JJAP.51.02BD08
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Oct 14, 2021


checked on Oct 14, 2021

Page view(s)

checked on Oct 14, 2021

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.