Please use this identifier to cite or link to this item:
https://doi.org/10.1143/APEX.5.116502
Title: | N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates | Authors: | Ivana Subramanian, S. Owen, M.H.S. Tan, K.H. Loke, W.K. Wicaksono, S. Yoon, S.F. Yeo, Y.-C. |
Issue Date: | Nov-2012 | Citation: | Ivana, Subramanian, S., Owen, M.H.S., Tan, K.H., Loke, W.K., Wicaksono, S., Yoon, S.F., Yeo, Y.-C. (2012-11). N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates. Applied Physics Express 5 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/APEX.5.116502 | Abstract: | InGaAs n-channel metal oxide semiconductor field-effect transistors (MOSFETs) were fabricated on germanium-on-insulator (GeOI) substrate for the first time. Integration of InGaAs on a GeOI substrate was achieved using a molecular beam epitaxy (MBE)-grown InAlAs graded buffer. The fabricated MOSFET, with a self-aligned Ni-InGaAs metallic source/drain, achieves good device characteristics. The normalized transconductance (Gm · tox) compares very well with reported data for InGaAs n-MOSFETs formed on bulk InP substrates, and is significantly higher than reported data for In 0.53Ga0.47As n-MOSFETs fabricated on Si substrates using a similar growth technique. © 2012 The Japan Society of Applied Physics. | Source Title: | Applied Physics Express | URI: | http://scholarbank.nus.edu.sg/handle/10635/82748 | ISSN: | 18820778 | DOI: | 10.1143/APEX.5.116502 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
9
checked on Jan 12, 2021
WEB OF SCIENCETM
Citations
11
checked on Jan 12, 2021
Page view(s)
93
checked on Jan 18, 2021
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.