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|Title:||N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates||Authors:||Ivana
|Issue Date:||Nov-2012||Citation:||Ivana, Subramanian, S., Owen, M.H.S., Tan, K.H., Loke, W.K., Wicaksono, S., Yoon, S.F., Yeo, Y.-C. (2012-11). N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates. Applied Physics Express 5 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/APEX.5.116502||Abstract:||InGaAs n-channel metal oxide semiconductor field-effect transistors (MOSFETs) were fabricated on germanium-on-insulator (GeOI) substrate for the first time. Integration of InGaAs on a GeOI substrate was achieved using a molecular beam epitaxy (MBE)-grown InAlAs graded buffer. The fabricated MOSFET, with a self-aligned Ni-InGaAs metallic source/drain, achieves good device characteristics. The normalized transconductance (Gm · tox) compares very well with reported data for InGaAs n-MOSFETs formed on bulk InP substrates, and is significantly higher than reported data for In 0.53Ga0.47As n-MOSFETs fabricated on Si substrates using a similar growth technique. © 2012 The Japan Society of Applied Physics.||Source Title:||Applied Physics Express||URI:||http://scholarbank.nus.edu.sg/handle/10635/82748||ISSN:||18820778||DOI:||10.1143/APEX.5.116502|
|Appears in Collections:||Staff Publications|
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