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|Title:||NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stress||Authors:||Liu, B.
|Keywords:||Diamond-like carbon (DLC)
|Issue Date:||2009||Citation:||Liu, B., Tan, K.-M., Yang, M., Yeo, Y.-C. (2009). NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stress. IEEE Electron Device Letters 30 (8) : 867-869. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2024332||Abstract:||Negative bias temperature instability (NBTI) characteristics of p-channel field-effect transistors (p-FETs) with diamond-like carbon (DLC) liner stressor having ultrahigh compressive stress ∼5 GPa) are investigated for the first time. Ultrafast measurement was employed for NBTI study. Power law slopes ranging from ∼0.058 to ∼0.072 are reported here. P-FETs with higher channel strain show greater threshold voltage shift Δ Vth) and transconductance degradation than those with lower or no channel strain under the same NBT stress condition Vstress. Strained p-FETs with Si S/D and DLC stressors are projected to have an NBTI lifetime of ten years at VG = -0.99 V using Eox power law lifetime extrapolation model or at VG = -0.76 using the exponential Vstress model. © 2009 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82745||ISSN:||07413106||DOI:||10.1109/LED.2009.2024332|
|Appears in Collections:||Staff Publications|
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