Please use this identifier to cite or link to this item:
|Title:||Modification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interface||Authors:||Lim, A.E.-J.
Work function modification
|Issue Date:||Aug-2008||Citation:||Lim, A.E.-J., Lee, R.T.P., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C. (2008-08). Modification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interface. IEEE Electron Device Letters 29 (8) : 848-851. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000997||Abstract:||This letter demonstrates a way for modifying the effective work function Φm of a molybdenum (Mo) gate electrode by interface dipole engineering in a metal gate/high-κ gate stack. N-type Mo gate Φm (∼4.2 eV) was achieved on a HfLaO gate dielectric even after 950-°C rapid thermal annealing (RTA) due to the presence of a La-induced interface dipole layer. By alloying with ∼14%-19% of aluminum (Al), the effective Mo gate Φm on HfLaO significantly increased by ∼0.6 eV after 950-°C RTA. The incorporation of Al into the HfLaO gate dielectric was evident after the high-temperature anneal. The Φm modulation was attributed to Al-induced interface dipole formation, of which has opposite polarity to the La-induced dipole, at the high-κ/SiO2 interface. This novel concept of employing two opposing interface dipoles in the same metal gate/high-κ stack for Φm tunability would provide insights for future gate stack interface engineering. © 2008 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82717||ISSN:||07413106||DOI:||10.1109/LED.2008.2000997|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.