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Title: n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport
Authors: Chui, K.-J.
Ang, K.-W.
Balasubramanian, N.
Li, M.-F. 
Samudra, G.S. 
Yeo, Y.-C. 
Keywords: Drive current
Iinjection velocity
Uniaxial tension
Issue Date: Feb-2007
Citation: Chui, K.-J., Ang, K.-W., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C. (2007-02). n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport. IEEE Transactions on Electron Devices 54 (2) : 249-256. ScholarBank@NUS Repository.
Abstract: A novel strained-silicon (Si) n-MOSFET with 50-nm gate length is reported. The strained n-MOSFET features silicon-carbon Si1-y Cy source and drain (S/D) regions formed by a Si recess etch and a selective epitaxy of Si1-yCy in the S/D regions. The carbon mole fraction incorporated is 0.013. Lattice mismatch of ∼0.56% between Si0.987C0.013 and Si results in lateral tensile strain and vertical compressive strain in the Si channel region, both contributing to substantial electron-mobility enhancement. The conduction-band offset ΔEc between the Si0.987C0.013source and the strained Si channel could also contribute to an increased electron injection velocity vinj from the source. Implementation of the Si0.987 C0.013 S/D regions for n-MOSFET provides significant drive current IDsat enhancement of up to 50% at a gate length of 50 nm. © 2007 IEEE.
Source Title: IEEE Transactions on Electron Devices
ISSN: 00189383
DOI: 10.1109/TED.2006.888629
Appears in Collections:Staff Publications

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