Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2006.888629
Title: | n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport | Authors: | Chui, K.-J. Ang, K.-W. Balasubramanian, N. Li, M.-F. Samudra, G.S. Yeo, Y.-C. |
Keywords: | Drive current Iinjection velocity n-MOSFETs Uniaxial tension |
Issue Date: | Feb-2007 | Citation: | Chui, K.-J., Ang, K.-W., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C. (2007-02). n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport. IEEE Transactions on Electron Devices 54 (2) : 249-256. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2006.888629 | Abstract: | A novel strained-silicon (Si) n-MOSFET with 50-nm gate length is reported. The strained n-MOSFET features silicon-carbon Si1-y Cy source and drain (S/D) regions formed by a Si recess etch and a selective epitaxy of Si1-yCy in the S/D regions. The carbon mole fraction incorporated is 0.013. Lattice mismatch of ∼0.56% between Si0.987C0.013 and Si results in lateral tensile strain and vertical compressive strain in the Si channel region, both contributing to substantial electron-mobility enhancement. The conduction-band offset ΔEc between the Si0.987C0.013source and the strained Si channel could also contribute to an increased electron injection velocity vinj from the source. Implementation of the Si0.987 C0.013 S/D regions for n-MOSFET provides significant drive current IDsat enhancement of up to 50% at a gate length of 50 nm. © 2007 IEEE. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/82767 | ISSN: | 00189383 | DOI: | 10.1109/TED.2006.888629 |
Appears in Collections: | Staff Publications |
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