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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

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Date Issued:  [2000 TO 2023]
Type:  Article

Results 181-200 of 236 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
1812011Self-aligned gate-first In0.7Ga0.3 As n-MOSFETs with an InP capping layer for performance enhancementGong, X.; Ivana; Chin, H.-C.; Zhu, Z.; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
1822013Self-selection unipolar HfOx-Based RRAMTran, X.A.; Zhu, W.; Liu, W.J.; Yeo, Y.C. ; Nguyen, B.Y.; Yu, H.Y.
183May-2010Silane and ammonia surface passivation technology for high-mobility In 0.53Ga0.47As MOSFETsChin, H.-C.; Liu, X.; Gong, X.; Yeo, Y.-C. 
1842009Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETsChin, H.-C.; Zhu, M. ; Liu, X.; Lee, H.-K.; Shi, L.; Tan, L.-S. ; Yeo, Y.-C. 
18511-Apr-2011Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrateHan, G. ; Guo, P.; Yang, Y.; Zhan, C.; Zhou, Q. ; Yeo, Y.-C. 
1862009Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETsKoh, S.-M.; Wang, X.; Sekar, K.; Krull, W.; Samudra, G.S. ; Yeo, Y.-C. 
1872012Silicon-carbon source and drain stressors: Carbon profile design by ion implantationZhou, Q. ; Koh, S.-M.; Tong, Y.; Henry, T.; Erokhin, Y.; Yeo, Y.-C. 
188May-2008Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistorsWong, H.-S.; Ang, K.-W.; Chan, L.; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Weeks, D.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
1891-Jan-2008Simulation and design of a germanium L-shaped impact-ionization MOS transistorToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
190Jul-2008Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidationWong, H.-S.; Koh, A.T.-Y.; Chin, H.-C.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
191Apr-2011Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructureHan, G. ; Guo, P.; Yang, Y.; Fan, L.; Yee, Y.S.; Zhan, C.; Yeo, Y.-C. 
192Apr-2011Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reductionGong, X.; Chin, H.-C.; Koh, S.-M.; Wang, L.; Ivana; Zhu, Z.; Wang, B.; Chia, C.K.; Yeo, Y.-C. 
193Jan-2008Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
1942007Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurementsWong, K.M. ; Chim, W.K. ; Ang, K.W.; Yeo, Y.C. 
195Dec-2009SPICE behavioral model of the tunneling field-effect transistor for circuit simulationHong, Y.; Yang, Y.; Yang, L.; Samudra, G. ; Heng, C.-H. ; Yeo, Y.-C. 
196Oct-2007Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization regionToh, E.-H.; Wang, G.H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1972013Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallizationDing, Y.; Cheng, R. ; Zhou, Q. ; Du, A.; Daval, N.; Nguyen, B.-Y.; Yeo, Y.-C. 
1982008Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressorsMadan, A.; Samudra, G. ; Yeo, Y.-C. 
1992018Strain relaxation of germanium-tin (GeSn) finsKang, Y; Huang, Y.-C; Lee, K.H; Bao, S; Wang, W ; Lei, D ; Masudy-Panah, S ; Dong, Y ; Wu, Y ; Xu, S ; Tan, C.S; Gong, X ; Yeo, Y.-C 
20025-Apr-2008Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technologyWang, G.H.; Toh, E.-H.; Wang, X.; Hoe, K.-M.; Tripathy, S.; Samudra, G.S. ; Yeo, Y.-C.