Self-aligned gate-first In0.7Ga0.3 As n-MOSFETs with an InP capping layer for performance enhancement

Abstract

We report the first demonstration of InP-capped In0.7Ga 0.3 As channel n-metal-oxide-semiconductor field-effect transistors (MOSFETs) using a self-aligned gate-first process. MOSFETs with the gate length LG down to 350 nm were fabricated, and the dependence of device performance on the InP thickness (2 and 4 nm) was investigated. InP capping leads to a significant reduction in the subthreshold swing S. Transconductance and saturation drain current are enhanced in n-MOSFETs with the InP-capped In 0.7Ga0.3 As channel as compared with those without InP capping, indicating an increased electron mobility in the In 0.7Ga0.3 As channel due to the InP capping. © 2010 The Electrochemical Society.