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|Title:||Silane and ammonia surface passivation technology for high-mobility In 0.53Ga0.47As MOSFETs||Authors:||Chin, H.-C.
Metal-oxide- semiconductor field-effect transistor (MOSFET)
|Issue Date:||May-2010||Citation:||Chin, H.-C., Liu, X., Gong, X., Yeo, Y.-C. (2010-05). Silane and ammonia surface passivation technology for high-mobility In 0.53Ga0.47As MOSFETs. IEEE Transactions on Electron Devices 57 (5) : 973-979. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2010.2044285||Abstract:||We report the integration of silane and ammonia SiH4 + NH 3) surface passivation technology to realize high-quality gate stack on a high-mobility In0.53Ga0.47As compound semiconductor. Vacuum anneal at 520 °C desorbs the native oxide while preserving the surface morphology and material composition of In0.53Ga 0.47As. By incorporating SiH4 + NH3 passivation, a thin silicon oxynitride (SiOxNy) interfacial layer was formed during high-κ dielectric deposition. In 0.53Ga0.47As n-MOSFETs with SiH4 + NH 3 passivation demonstrate significantly reduced subthreshold swing and off-state leakage current Ioff in comparison with control In 0.53Ga0.47As n-MOSFETs without passivation. This is due to significant reduction of interface state density Dit. Improvement in carrier mobility over the control In0.53Ga0.47As n-MOSFETs was also achieved with SiH4 + NH3 passivation. © 2010 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/83018||ISSN:||00189383||DOI:||10.1109/TED.2010.2044285|
|Appears in Collections:||Staff Publications|
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