Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.5012559
Title: Strain relaxation of germanium-tin (GeSn) fins
Authors: Kang, Y
Huang, Y.-C
Lee, K.H
Bao, S
Wang, W 
Lei, D 
Masudy-Panah, S 
Dong, Y 
Wu, Y 
Xu, S 
Tan, C.S
Gong, X 
Yeo, Y.-C 
Keywords: Electron beam lithography
Finite element method
Fins (heat exchange)
Raman spectroscopy
Strain relaxation
Wafer bonding
Direct wafer bonding
Fin structures
Finite element simulations
Germanium tins
Micro Raman Spectroscopy
Raman measurements
Strain components
Transverse strain
Tin alloys
Issue Date: 2018
Citation: Kang, Y, Huang, Y.-C, Lee, K.H, Bao, S, Wang, W, Lei, D, Masudy-Panah, S, Dong, Y, Wu, Y, Xu, S, Tan, C.S, Gong, X, Yeo, Y.-C (2018). Strain relaxation of germanium-tin (GeSn) fins. AIP Advances 8 (2) : 25111. ScholarBank@NUS Repository. https://doi.org/10.1063/1.5012559
Abstract: Strain relaxation of biaxially strained Ge1-xSnx layer when it is patterned into Ge1-xSnx fin structures is studied. Ge1-xSnx-on-insulator (GeSnOI) substrate was realized using a direct wafer bonding (DWB) technique and Ge1-xSnx fin structures were formed by electron beam lithography (EBL) patterning and dry etching. The strain in the Ge1-xSnx fins having fin widths (WFin) ranging from 1 μm down to 80 nm was characterized using micro-Raman spectroscopy. Raman measurements show that the strain relaxation increases with decreasing WFin. Finite element (FE) simulation shows that the strain component in the transverse direction relaxes with decreasing WFin, while the strain component along the fin direction remains unchanged. For various Ge1-xSnx fin widths, transverse strain relaxation was further extracted using micro-Raman spectroscopy, which is consistent with the simulation results. © 2018 Author(s).
Source Title: AIP Advances
URI: https://scholarbank.nus.edu.sg/handle/10635/176058
ISSN: 2158-3226
DOI: 10.1063/1.5012559
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