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https://doi.org/10.1088/0268-1242/23/1/015012
Title: | Simulation and design of a germanium L-shaped impact-ionization MOS transistor | Authors: | Toh, E.-H. Wang, G.H. Chan, L. Samudra, G. Yeo, Y.-C. |
Issue Date: | 1-Jan-2008 | Citation: | Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C. (2008-01-01). Simulation and design of a germanium L-shaped impact-ionization MOS transistor. Semiconductor Science and Technology 23 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/23/1/015012 | Abstract: | This paper reports a novel L-shaped impact-ionization MOS (LI-MOS) transistor structure that achieves a subthreshold swing of well below 60 mV/decade at room temperature and operates at a low supply voltage. The device features an L-shaped or an elevated impact-ionization region (I-region), which displaces the hot carrier activity away from the gate dielectric region to improve hot carrier reliability and VT stability problems. Germanium, which has a lower bandgap and impact-ionization threshold energy lower than silicon, is chosen as the material of choice for the LI-MOS transistor structure. Device physics and design principles for the LI-MOS transistor are detailed through extensive two-dimensional device simulations. The LI-MOS transistor exhibits excellent scalability, making it suitable for augmenting the performance of standard CMOS transistors in future technology generations. © 2008 IOP Publishing Ltd. | Source Title: | Semiconductor Science and Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/83025 | ISSN: | 02681242 | DOI: | 10.1088/0268-1242/23/1/015012 |
Appears in Collections: | Staff Publications |
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