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|Title:||Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate||Authors:||Han, G.
|Issue Date:||11-Apr-2011||Citation:||Han, G., Guo, P., Yang, Y., Zhan, C., Zhou, Q., Yeo, Y.-C. (2011-04-11). Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate. Applied Physics Letters 98 (15) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3579242||Abstract:||Si-based tunneling field-effect transistors (TFETs) with elevated Ge source were fabricated on Si(110) substrate. The in situ B-doped Ge (Ge:B) source grown on Si(110) has a substitutional B concentration up to 7.8× 1020 cm-3, that is more than one order of magnitude higher than that in Ge grown on Si(100) under the same growth conditions. Ge:B epitaxy on (110) and (100) Si is discussed. The TFET with elevated Ge source formed on Si(110) has a subthreshold swing of 85 mV/decade, which is a substantial improvement over that of the control TFET formed on Si(100). This is attributed to the high B doping concentration in the Ge:B(110) source as well as the band gap narrowing effect. © 2011 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/57401||ISSN:||00036951||DOI:||10.1063/1.3579242|
|Appears in Collections:||Staff Publications|
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