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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Type:  Article

Results 21-40 of 236 (Search time: 0.034 seconds).

Issue DateTitleAuthor(s)
2115-Jul-2013Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopyOwen, M.H.S.; Guo, C.; Chen, S.-H.; Wan, C.-T.; Cheng, C.-C.; Wu, C.-H.; Ko, C.-H.; Wann, C.H.; Ivana; Zhang, Z.; Pan, J.S.; Yeo, Y.-C. 
2228-Mar-2011Band offsets between SiO2 and phase change materials in the (GeTe) x (Sb2 Te3) 1-x pseudobinary systemFang, L.W.-W.; Zhao, R.; Zhang, Z.; Pan, J.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
2322-Jun-2012Breaking the speed limits of phase-change memoryLoke, D.; Lee, T.H.; Wang, W.J.; Shi, L.P.; Zhao, R.; Yeo, Y.C. ; Chong, T.C.; Elliott, S.R.
24Nov-2007Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regionsAng, K.-W.; Chin, H.-C.; Chui, K.-J.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
2519-Jul-2010Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressorsKoh, S.-M.; Samudra, G.S. ; Yeo, Y.-C. 
262010Carrier transport in strained p-channel field-effect transistors with diamondlike carbon liner stressorCheng, R. ; Liu, B.; Yeo, Y.-C. 
2715-Feb-2012Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrateXu, Z.; Yoon, S.F.; Yeo, Y.C. ; Chia, C.K.; Cheng, Y.B.; Dalapati, G.K.
282008Chemical reversability of the electrical dedoping of conducting polymers: An organic chemically erasable programmable read-only memoryChia, P.-J. ; Yeo, Y.-C. ; Burroughes, J.H.; Friend, R.H. ; Ho, P.K.-H. 
29Jul-2008Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistorToh, E.-H.; Wang, G.H.; Chan, L.; Weeks, D.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
302008Compact HSPICE model for IMOS deviceLin, J. ; Toh, E.H.; Shen, C.; Sylvester, D.; Heng, C.H. ; Samudra, G. ; Yeo, Y.C. 
3125-Apr-2008Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancementWang, G.H.; Toh, E.-H.; Tung, C.-H.; Tripathy, S.; Samudra, G.S. ; Yeo, Y.-C. 
322013Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineeringZhou, Q. ; Koh, S.-M.; Thanigaivelan, T.; Henry, T.; Yeo, Y.-C. 
33Jun-2010Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drainSinha, M.; Lee, R.T.P. ; Chor, E.F. ; Yeo, Y.-C. 
342009Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drainWong, H.-S.; Ang, K.-W.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
35Apr-2012Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregationKoh, S.-M.; Samudra, G.S. ; Yeo, Y.-C. 
36Nov-2011Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregationKoh, S.-M.; Kong, E.Y.-J.; Liu, B.; Ng, C.-M.; Samudra, G.S. ; Yeo, Y.-C. 
37Feb-2007Controlled insulator-to-metal transformation in printable polymer composites with nanometal clustersSivaramakrishnan, S. ; Chia, P.-J. ; Yeo, Y.-C. ; Chua, L.-L. ; Ho, P.K.-H. 
38Jan-2013Crystal structure and epitaxial relationship of Ni4InGaAs 2 films formed on InGaAs by annealingIvana; Foo, Y.L.; Zhang, X.; Zhou, Q. ; Pan, J.; Kong, E.; Owen, M.H.S.; Yeo, Y.-C. 
392009Dependence of energy band offsets at Ge2Sb2Te 5 / SiO2 interface on nitrogen concentrationFang, L.W.-W.; Zheng, Z.; Pan, J.-S.; Zhao, R.; Li, M.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
4015-May-2010Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5Fang, L.W.-W.; Zhao, R.; Li, M.; Lim, K.-G.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C.