Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.4813882
| Title: | Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy | Authors: | Owen, M.H.S. Guo, C. Chen, S.-H. Wan, C.-T. Cheng, C.-C. Wu, C.-H. Ko, C.-H. Wann, C.H. Ivana Zhang, Z. Pan, J.S. Yeo, Y.-C. |
Issue Date: | 15-Jul-2013 | Citation: | Owen, M.H.S., Guo, C., Chen, S.-H., Wan, C.-T., Cheng, C.-C., Wu, C.-H., Ko, C.-H., Wann, C.H., Ivana, Zhang, Z., Pan, J.S., Yeo, Y.-C. (2013-07-15). Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy. Applied Physics Letters 103 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4813882 | Abstract: | Lattice-matched In0.48Al0.52P was grown on a p-type Ge(100) substrate by metal-organic chemical vapor deposition, and the band-alignment of In0.48Al0.52P on Ge substrate was obtained by high resolution x-ray photoelectron spectroscopy. The valence band offset for the InAlP/Ge(100) interface was found to be 0.86 eV, with a corresponding conduction band offset of 0.84 eV. From the values obtained, the energy band diagram of InAlP/Ge interface is found to be of type I. © 2013 AIP Publishing LLC. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82001 | ISSN: | 00036951 | DOI: | 10.1063/1.4813882 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
9
checked on Jun 16, 2019
WEB OF SCIENCETM
Citations
8
checked on Mar 26, 2019
Page view(s)
51
checked on May 23, 2019
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.