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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

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Date Issued:  [2000 TO 2023]
Type:  Article

Results 81-100 of 236 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
812013Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drainLiu, B.; Zhan, C.; Yang, Y.; Cheng, R. ; Guo, P.; Zhou, Q. ; Kong, E.Y.-J.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
822013Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrateLiu, B.; Gong, X.; Zhan, C.; Han, G. ; Chin, H.-C.; Ling, M.-L.; Li, J.; Liu, Y.; Hu, J.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
83Jul-2008Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Tan, B.L.-H.; Balasubramanian, N.; Yeo, Y.-C. 
842013Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivationGong, X.; Han, G. ; Bai, F.; Su, S.; Guo, P.; Yang, Y.; Cheng, R. ; Zhang, D.; Zhang, G.; Xue, C.; Cheng, B.; Pan, J. ; Zhang, Z.; Tok, E.S. ; Antoniadis, D.; Yeo, Y.-C. 
852012Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal annealWang, L.; Su, S.; Wang, W.; Yang, Y.; Tong, Y.; Liu, B.; Guo, P.; Gong, X.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
8621-May-2013Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation studyYang, Y.; Lu Low, K.; Wang, W.; Guo, P.; Wang, L.; Han, G. ; Yeo, Y.-C. 
872014Germanium-Tin on Si avalanche photodiode: Device design and technology demonstrationDong, Y.; Wang, W. ; Xu, X.; Gong, X. ; Lei, D.; Zhou, Q. ; Xu, Z.; Loke, W.K.; Yoon, S.-F.; Liang, G. ; Yeo, Y.-C. 
88Dec-2013Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstrationYang, Y.; Han, G.; Guo, P.; Wang, W.; Gong, X.; Wang, L.; Low, K.L.; Yeo, Y.-C. 
892001Growing cascade correlation networks in two dimensions: A heuristic approachSu, L.; Guan, S.U. ; Yeo, Y.C. 
902016Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded bufferKohen, D; Nguyen, X.S; Yadav, S; Kumar, A ; Made, R.I; Heidelberger, C; Gong, X ; Lee, K.H; Lee, K.E.K; Yeo, Y.C ; Yoon, S.F ; Fitzgerald, E.A
912011High performance metal-insulator-metal capacitors with Er2O 3 on ALD SiO2 for RF applicationsPhung, T.H.; Srinivasan, D.K.; Steinmann, P.; Wise, R.; Yu, M.-B.; Yeo, Y.-C. ; Zhu, C. 
922006High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Foo, Y.-L.; Tung, C.-H.; Choy, S.-F.; Samudra, G. ; Yeo, Y.-C. 
932012High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stackLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
942018High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platformWang, W. ; Lei, D. ; Huang, Y.-C.; Lee, K.H.; Loke, W.-K.; Dong, Y. ; Xu, S. ; Tan, C.S.; Wang, H.; Yoon, S.-F.; Gong, X. ; Yeo, Y.-C. 
95Jan-2010High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor depositionLiu, X.; Chin, H.-C.; Tan, L.S. ; Yeo, Y.-C. 
96Nov-2007Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependenceAng, K.-W.; Wan, C.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
97Dec-2006I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineeringToh, E.-H.; Wang, G.H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
98Feb-2011III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped FinChin, H.-C.; Gong, X.; Wang, L.; Lee, H.K.; Shi, L.; Yeo, Y.-C. 
99Dec-2011Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implantTong, Y.; Zhou, Q. ; Chua, L.H.; Thanigaivelan, T.; Henry, T.; Yeo, Y.-C. 
10029-Aug-2011Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistorsLiu, X.; Kim Fong Low, E.; Pan, J.; Liu, W.; Leong Teo, K. ; Tan, L.-S. ; Yeo, Y.-C.