Please use this identifier to cite or link to this item: https://doi.org/10.1364/OE.26.010305
Title: High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
Authors: Wang, W. 
Lei, D. 
Huang, Y.-C.
Lee, K.H.
Loke, W.-K.
Dong, Y. 
Xu, S. 
Tan, C.S.
Wang, H.
Yoon, S.-F.
Gong, X. 
Yeo, Y.-C. 
Issue Date: 2018
Publisher: OSA - The Optical Society
Citation: Wang, W., Lei, D., Huang, Y.-C., Lee, K.H., Loke, W.-K., Dong, Y., Xu, S., Tan, C.S., Wang, H., Yoon, S.-F., Gong, X., Yeo, Y.-C. (2018). High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform. Optics Express 26 (8) : 10305-10314. ScholarBank@NUS Repository. https://doi.org/10.1364/OE.26.010305
Rights: Attribution 4.0 International
Abstract: We report the first demonstration of high-performance GeSn metal-semiconductor-metal (MSM) photodetector and GeSn p-type fin field-effect transistor (pFinFET) on an advanced GeSn-on-insulator (GeSnOI) platform by complementary metal-oxide-semiconductor (CMOS) compatible processes. The detection range of GeSn photodetector is extended beyond 2 祄, with responsivities of 0.39 and 0.10 A/W at 1550 nm and 2003 nm, respectively. Through the insertion of an ultrathin Al2O3 Schottky-barrier-enhancement layer, the dark current IDark of the GeSn photodetector is suppressed by more than 2 orders of magnitude. An impressive IDark of ~65 nA was achieved at an operating voltage of 1.0 V. A frequency response measurement reveals the achievement of a 3-dB bandwidth of ~1.4 GHz at an illumination wavelength of 2 祄. GeSn pFinFET with fin width (Wfin) scaled down to 15 nm was also fabricated on the GeSnOI platform, exhibiting a small subthreshold swing (S) of 93 mV/decade, a high drive current of 176 礎/祄, and good control of short channel effects (SCEs). This work paves the way for realizing compact, low-cost, and multifunctional GeSn-on-insulator opto-electronic integrated circuits. � 2018 Optical Society of America.
Source Title: Optics Express
URI: https://scholarbank.nus.edu.sg/handle/10635/214046
ISSN: 10944087
DOI: 10.1364/OE.26.010305
Rights: Attribution 4.0 International
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