Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4961025
Title: Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
Authors: Kohen, D
Nguyen, X.S
Yadav, S
Kumar, A 
Made, R.I
Heidelberger, C
Gong, X 
Lee, K.H
Lee, K.E.K
Yeo, Y.C 
Yoon, S.F 
Fitzgerald, E.A
Keywords: Electron mobility
Epitaxial growth
Field effect transistors
Germanium
Metallorganic vapor phase epitaxy
Organometallics
Phase separation
Silicon wafers
Surface roughness
Channel length
Compositionally graded buffers
Graded buffer
High electron mobility transistor (HEMT)
Metal-organic vapor phase epitaxy
Silicon substrates
Strain relaxing
Threading dislocation densities
High electron mobility transistors
Issue Date: 2016
Citation: Kohen, D, Nguyen, X.S, Yadav, S, Kumar, A, Made, R.I, Heidelberger, C, Gong, X, Lee, K.H, Lee, K.E.K, Yeo, Y.C, Yoon, S.F, Fitzgerald, E.A (2016). Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer. AIP Advances 6 (8) : 85106. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4961025
Abstract: We report on the growth of an In0.30Ga0.70As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 107 cm-2 with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with IDS of 70 μA/μm and gm of above 60 μS/μm, demonstrating the high quality of the grown materials. © 2016 Author(s).
Source Title: AIP Advances
URI: https://scholarbank.nus.edu.sg/handle/10635/176123
ISSN: 2158-3226
DOI: 10.1063/1.4961025
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