Results 1-9 of 9 (Search time: 0.009 seconds).

Issue DateTitleAuthor(s)
12013Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulatorsLee, S.Y; Yoon, S.F ; Ngo, A.C.Y; Guo, T
22016Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded bufferKohen, D; Nguyen, X.S; Yadav, S; Kumar, A ; Made, R.I; Heidelberger, C; Gong, X ; Lee, K.H; Lee, K.E.K; Yeo, Y.C ; Yoon, S.F ; Fitzgerald, E.A
32020High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si WafersKhai, L.W. ; Geok Ing, N.; Fitzgerald, E.A.; Soon Fatt, Y. ; Yue, W.; Kwang Hong, L.; Zhihong, L.; Hanlin, X.; Siau Ben, C.; Eng Kian, K.L.; Xing, Z.; Tan, C.S.
42011Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealingZhao, H; Yoon, S.F ; Ngo, C.Y; Wang, R
52018In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrationsWang, Y; Lee, K.H; Loke, W.K ; Ben Chiah, S; Zhou, X; Yoon, S.F ; Tan, C.S; Fitzgerald, E
62013Integration of TaOx-based resistive-switching element and GaAs diodeXu Z.; Tong X. ; Yoon S.F. ; Yeo Y.C. ; Chia C.K.; Dalapati G.K.; Chi D.Z.
72012Large size self-assembled quantum rings: Quantum size effect and modulation on the surface diffusionTong, C; Yoon, S.F ; Wang, L
82016Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layerLee, K.H; Bao, S; Wang, B; Wang, C; Yoon, S.F ; Michel, J; Fitzgerald, E.A; Tan, C.S
92011Thermal Effects and Small Signal Modulation of 1.3-?m InAs/GaAs Self-Assembled Quantum-Dot LasersZhao, H.X; Yoon, S.F ; Tong, C.Z; Liu, C.Y; Wang, R; Cao, Q