Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.4820421
| Title: | Integration of TaOx-based resistive-switching element and GaAs diode | Authors: | Xu Z. Tong X. Yoon S.F. Yeo Y.C. Chia C.K. Dalapati G.K. Chi D.Z. |
Issue Date: | 2013 | Citation: | Xu Z., Tong X., Yoon S.F., Yeo Y.C., Chia C.K., Dalapati G.K., Chi D.Z. (2013). Integration of TaOx-based resistive-switching element and GaAs diode. APL Materials 1 (3) : 32121. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4820421 | Abstract: | We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V-2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V. © 2013 Author(s). | Source Title: | APL Materials | URI: | https://scholarbank.nus.edu.sg/handle/10635/174657 | ISSN: | 2166-532X | DOI: | 10.1063/1.4820421 |
| Appears in Collections: | Elements Staff Publications |
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