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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4820421
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dc.titleIntegration of TaOx-based resistive-switching element and GaAs diode
dc.contributor.authorXu Z.
dc.contributor.authorTong X.
dc.contributor.authorYoon S.F.
dc.contributor.authorYeo Y.C.
dc.contributor.authorChia C.K.
dc.contributor.authorDalapati G.K.
dc.contributor.authorChi D.Z.
dc.date.accessioned2020-09-08T03:52:52Z
dc.date.available2020-09-08T03:52:52Z
dc.date.issued2013
dc.identifier.citationXu Z., Tong X., Yoon S.F., Yeo Y.C., Chia C.K., Dalapati G.K., Chi D.Z. (2013). Integration of TaOx-based resistive-switching element and GaAs diode. APL Materials 1 (3) : 32121. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4820421
dc.identifier.issn2166-532X
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/174657
dc.description.abstractWe report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V-2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V. © 2013 Author(s).
dc.sourceUnpaywall 20200831
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1063/1.4820421
dc.description.sourcetitleAPL Materials
dc.description.volume1
dc.description.issue3
dc.description.page32121
dc.published.statePublished
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