Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.906933
Title: Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence
Authors: Ang, K.-W.
Wan, C.
Balasubramanian, N.
Samudra, G.S. 
Yeo, Y.-C. 
Keywords: Channel orientation
Hot-carrier effects
Silicon-carbon(Si1-yCy)
Strain
Issue Date: Nov-2007
Citation: Ang, K.-W., Wan, C., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007-11). Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence. IEEE Electron Device Letters 28 (11) : 996-999. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.906933
Abstract: We report the hot-carrier effects in a novel strained n-channel transistor (n-FET) featuring silicon-carbon source and drain (Si1-yCy S/D) stressors, and its dependence on channel orientations for the first time. Due to strain-induced bandgap reduction, Si1-yCy S/D n-FETs show enhanced impact ionization and therefore more pronounced drive current degradation over a control n-FET. As a consequence of the increased interface state generation, a strained n-FET with [010] channel shows worse hot-carrier reliability over a transistor with the conventional [110] channel, which leads to a larger shift in threshold voltage and subthreshold swing. In addition, a hot-carrier lifetime projection shows a dependence of operating drain voltage on the channel orientation of the strained n-FET. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82475
ISSN: 07413106
DOI: 10.1109/LED.2007.906933
Appears in Collections:Staff Publications

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