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|Title:||Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence||Authors:||Ang, K.-W.
|Issue Date:||Nov-2007||Citation:||Ang, K.-W., Wan, C., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007-11). Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence. IEEE Electron Device Letters 28 (11) : 996-999. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.906933||Abstract:||We report the hot-carrier effects in a novel strained n-channel transistor (n-FET) featuring silicon-carbon source and drain (Si1-yCy S/D) stressors, and its dependence on channel orientations for the first time. Due to strain-induced bandgap reduction, Si1-yCy S/D n-FETs show enhanced impact ionization and therefore more pronounced drive current degradation over a control n-FET. As a consequence of the increased interface state generation, a strained n-FET with  channel shows worse hot-carrier reliability over a transistor with the conventional  channel, which leads to a larger shift in threshold voltage and subthreshold swing. In addition, a hot-carrier lifetime projection shows a dependence of operating drain voltage on the channel orientation of the strained n-FET. © 2007 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82475||ISSN:||07413106||DOI:||10.1109/LED.2007.906933|
|Appears in Collections:||Staff Publications|
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