Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2013.2287031
Title: | Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration | Authors: | Yang, Y. Han, G. Guo, P. Wang, W. Gong, X. Wang, L. Low, K.L. Yeo, Y.-C. |
Keywords: | Band-to-band tunneling direct bandgap germanium-tin p-channel tunneling field-effect transistor (p-TFET) |
Issue Date: | Dec-2013 | Citation: | Yang, Y., Han, G., Guo, P., Wang, W., Gong, X., Wang, L., Low, K.L., Yeo, Y.-C. (2013-12). Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration. IEEE Transactions on Electron Devices 60 (12) : 4048-4056. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2013.2287031 | Abstract: | We report the demonstration of germanium-tin (GeSn) p-channel tunneling field-effect transistor (p-TFET) with good device performance in terms of on-state current (I-{on}). With the incorporation of Sn, the conduction band minima at \Gamma-point of GeSn alloy shift down, increasing the direct band-to-band tunneling (BTBT) generation rate at the source-channel tunneling junction in TFET. In addition, n-type dopant activation temperature of below 400^{\circ}{\rm C} can be used in GeSn, which is much lower than that in Ge (700^{\circ}{\rm C} ). Therefore, n-type dopant diffusion in GeSn is suppressed leading to an abrupt {\rm n}+ tunneling junction that is favorable for the source junction of a p-TFET. Lateral {\rm Ge}-{0.958}{\rm Sn} 0.042 p-TFETs were fabricated and high Ion of 29 \mu{\rm A}/\mu{\rm m} at V-{\rm GS}=V-{\rm DS}=-2~{\rm V} and 4.34 \mu{\rm A}/\mu{\rm m} at V-{\rm GS}=V-{\rm DS}=-1~{\rm V} is achieved. © 2013 IEEE. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/82418 | ISSN: | 00189383 | DOI: | 10.1109/TED.2013.2287031 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
54
checked on Jan 31, 2023
WEB OF SCIENCETM
Citations
50
checked on Jan 24, 2023
Page view(s)
170
checked on Feb 2, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.