Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2035144
Title: High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition
Authors: Liu, X.
Chin, H.-C.
Tan, L.S. 
Yeo, Y.-C. 
Keywords: Flatband voltage shift
Frequency dispersion
Gallium nitride (GaN)
High-k
In situ surface passivation
Interface state density.
Issue Date: Jan-2010
Citation: Liu, X., Chin, H.-C., Tan, L.S., Yeo, Y.-C. (2010-01). High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition. IEEE Electron Device Letters 31 (1) : 8-10. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2035144
Abstract: We report the first demonstration of an in situ surface-passivation technology for a GaN substrate using vacuum anneal (VA) and silane (SiH4) treatment in a metal-organic chemical vapor deposition multichamber tool. Excellent electrical properties were obtained for TaN/HfAlO/GaN capacitors. Interface state density Dit was measured from midgap to nearconduction-band edge (EC) using the conductance method at high temperatures, and the lowest Dit of 1 × 1011 cm-2 * eV-1 at the midgap was achieved. Multiple frequency capacitance-voltage (C-V )measurement (10, 400, and 500 kHz) showed little frequency dispersion. Furthermore, the TaN/HfAlO/GaN stack was studied using high-resolution transmission electron microscopy, and the effectiveness of passivation using VA and SiH4 was evaluated using high-resolution X-ray photoelectron spectroscopy. The method reported here effectively removes the native oxide and passivates the GaN surface during the high-k dielectric-deposition process. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82468
ISSN: 07413106
DOI: 10.1109/LED.2009.2035144
Appears in Collections:Staff Publications

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