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|Title:||Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors||Authors:||Liu, X.
Kim Fong Low, E.
Leong Teo, K.
|Issue Date:||29-Aug-2011||Citation:||Liu, X., Kim Fong Low, E., Pan, J., Liu, W., Leong Teo, K., Tan, L.-S., Yeo, Y.-C. (2011-08-29). Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors. Applied Physics Letters 99 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3633104||Abstract:||The effect of in situ vacuum anneal (VA) and silane (SiH4) treatment on the electrical characteristics of AlGaN/GaN metal-oxide- semiconductor high-electron mobility transistors was investigated. Native Ga-O bonds on the AlGaN surface can be completely removed by this in situ passivation technique, which was confirmed by x-ray photoelectron spectroscopy. In situ VA and SiH4 passivation also reduced the device gate leakage current. This is attributed to the suppression of trap-assisted tunneling current through the HfAlO gate dielectric. Saturation drain current for devices with in situ VA and SiH4 passivation was also improved, which is due to increased two-dimensional electron gas density. In addition, devices with in situ VA and SiH4 passivation achieved an Ion/Ioff ratio of around 106 and a subthreshold swing of less than 100 mV/decade. © 2011 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82496||ISSN:||00036951||DOI:||10.1063/1.3633104|
|Appears in Collections:||Staff Publications|
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