Please use this identifier to cite or link to this item:
|Title:||Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors||Authors:||Liu, X.
Kim Fong Low, E.
Leong Teo, K.
|Issue Date:||29-Aug-2011||Citation:||Liu, X., Kim Fong Low, E., Pan, J., Liu, W., Leong Teo, K., Tan, L.-S., Yeo, Y.-C. (2011-08-29). Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors. Applied Physics Letters 99 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3633104||Abstract:||The effect of in situ vacuum anneal (VA) and silane (SiH4) treatment on the electrical characteristics of AlGaN/GaN metal-oxide- semiconductor high-electron mobility transistors was investigated. Native Ga-O bonds on the AlGaN surface can be completely removed by this in situ passivation technique, which was confirmed by x-ray photoelectron spectroscopy. In situ VA and SiH4 passivation also reduced the device gate leakage current. This is attributed to the suppression of trap-assisted tunneling current through the HfAlO gate dielectric. Saturation drain current for devices with in situ VA and SiH4 passivation was also improved, which is due to increased two-dimensional electron gas density. In addition, devices with in situ VA and SiH4 passivation achieved an Ion/Ioff ratio of around 106 and a subthreshold swing of less than 100 mV/decade. © 2011 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82496||ISSN:||00036951||DOI:||10.1063/1.3633104|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 4, 2023
WEB OF SCIENCETM
checked on Jan 27, 2023
checked on Feb 2, 2023
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.