Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.910779

Title:	Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
Authors:	Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Hoe, K.-M. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C.
Keywords:	FinFET Multiple-gate transistor (MuGFET) Silicon-carbon Spacerless Strain Stress
Issue Date:	Jan-2008
Citation:	Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008-01). Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors. IEEE Electron Device Letters 29 (1) : 80-82. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.910779
Abstract:	A novel and low-cost spacer removal technique proved successful in further enhancing the IDsat performance of already strained n-channel trigate FinFETs with SiC source and drain (S/D) stressors. This extra enhancement is attributed to increased longitudinal tensile channel stress as a result of increased stress coupling efficiency from the SiC S/D stressors to the channel. The electrical results also establish that this extra enhancement will become even more significant as physical gate lengths are scaled down. © 2008 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/83041
ISSN:	07413106
DOI:	10.1109/LED.2007.910779
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check