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https://doi.org/10.1109/LED.2007.910779
Title: | Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors | Authors: | Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Hoe, K.-M. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. |
Keywords: | FinFET Multiple-gate transistor (MuGFET) Silicon-carbon Spacerless Strain Stress |
Issue Date: | Jan-2008 | Citation: | Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008-01). Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors. IEEE Electron Device Letters 29 (1) : 80-82. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.910779 | Abstract: | A novel and low-cost spacer removal technique proved successful in further enhancing the IDsat performance of already strained n-channel trigate FinFETs with SiC source and drain (S/D) stressors. This extra enhancement is attributed to increased longitudinal tensile channel stress as a result of increased stress coupling efficiency from the SiC S/D stressors to the channel. The electrical results also establish that this extra enhancement will become even more significant as physical gate lengths are scaled down. © 2008 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/83041 | ISSN: | 07413106 | DOI: | 10.1109/LED.2007.910779 |
Appears in Collections: | Staff Publications |
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