Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction

Abstract

In this paper, we report N-channel metal-oxide-semiconductor field-effect transistors (N-MOSFETs) featuring in situ doped raised In0.53Ga 0.47As source/drain (S/D) regions. This is the first demonstration of such regrowth on an In0.7Ga0.3As channel. After SiON spacer formation, the raised In0.53Ga0.47As S/D structure was formed by selective epitaxy of In0.53Ga0.47As in the S/D regions by metal-organic chemical-vapor deposition (MOCVD). In situ silane SiH4 doping was also introduced to boost the N-type doping concentration in the S/D regions for series resistance RSD reduction. The raised S/D structure contributes to IDsat enhancement for the In0.7Ga0.3As N-MOSFETs. © 2011 The Japan Society of Applied Physics.