Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.50.04DF01
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dc.titleSource/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction
dc.contributor.authorGong, X.
dc.contributor.authorChin, H.-C.
dc.contributor.authorKoh, S.-M.
dc.contributor.authorWang, L.
dc.contributor.authorIvana
dc.contributor.authorZhu, Z.
dc.contributor.authorWang, B.
dc.contributor.authorChia, C.K.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:36:33Z
dc.date.available2014-10-07T04:36:33Z
dc.date.issued2011-04
dc.identifier.citationGong, X., Chin, H.-C., Koh, S.-M., Wang, L., Ivana, Zhu, Z., Wang, B., Chia, C.K., Yeo, Y.-C. (2011-04). Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction. Japanese Journal of Applied Physics 50 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.50.04DF01
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83039
dc.description.abstractIn this paper, we report N-channel metal-oxide-semiconductor field-effect transistors (N-MOSFETs) featuring in situ doped raised In0.53Ga 0.47As source/drain (S/D) regions. This is the first demonstration of such regrowth on an In0.7Ga0.3As channel. After SiON spacer formation, the raised In0.53Ga0.47As S/D structure was formed by selective epitaxy of In0.53Ga0.47As in the S/D regions by metal-organic chemical-vapor deposition (MOCVD). In situ silane SiH4 doping was also introduced to boost the N-type doping concentration in the S/D regions for series resistance RSD reduction. The raised S/D structure contributes to IDsat enhancement for the In0.7Ga0.3As N-MOSFETs. © 2011 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.50.04DF01
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/JJAP.50.04DF01
dc.description.sourcetitleJapanese Journal of Applied Physics
dc.description.volume50
dc.description.issue4 PART 2
dc.description.page-
dc.identifier.isiut000289722400071
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