Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.50.04DF01
Title: Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction
Authors: Gong, X.
Chin, H.-C.
Koh, S.-M.
Wang, L.
Ivana
Zhu, Z.
Wang, B.
Chia, C.K.
Yeo, Y.-C. 
Issue Date: Apr-2011
Citation: Gong, X., Chin, H.-C., Koh, S.-M., Wang, L., Ivana, Zhu, Z., Wang, B., Chia, C.K., Yeo, Y.-C. (2011-04). Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction. Japanese Journal of Applied Physics 50 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.50.04DF01
Abstract: In this paper, we report N-channel metal-oxide-semiconductor field-effect transistors (N-MOSFETs) featuring in situ doped raised In0.53Ga 0.47As source/drain (S/D) regions. This is the first demonstration of such regrowth on an In0.7Ga0.3As channel. After SiON spacer formation, the raised In0.53Ga0.47As S/D structure was formed by selective epitaxy of In0.53Ga0.47As in the S/D regions by metal-organic chemical-vapor deposition (MOCVD). In situ silane SiH4 doping was also introduced to boost the N-type doping concentration in the S/D regions for series resistance RSD reduction. The raised S/D structure contributes to IDsat enhancement for the In0.7Ga0.3As N-MOSFETs. © 2011 The Japan Society of Applied Physics.
Source Title: Japanese Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/83039
ISSN: 00214922
DOI: 10.1143/JJAP.50.04DF01
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