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|Title:||Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs||Authors:||Chin, H.-C.
|Issue Date:||2009||Citation:||Chin, H.-C., Zhu, M., Liu, X., Lee, H.-K., Shi, L., Tan, L.-S., Yeo, Y.-C. (2009). Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs. IEEE Electron Device Letters 30 (2) : 110-112. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2010831||Abstract:||A novel surface passivation technology employing silane SiH4 and ammonia NH3 was demonstrated to realize high-quality metal-gate/high-k dielectric stack on GaAs. In addition to ex situ cleaning/passivation and in situ vacuum anneal to remove the native oxide on GaAs, the key improvements reported in this letter include the introduction of NH3 in a SiH4 passivation to form a SiN passivation layer that protects the GaAs surface from exposure to the oxidizing ambient during high- k dielectric deposition. Negligible As-O and Ga-O bonds were found. This passivation technology was integrated in a metal-organic chemical-vapor deposition tool. Inversion-type GaAs n-MOSFETs were fabricated with the SiH4 and NH3 passivation technology, showing good electrical characteristics with a peak effective mobility of 1920 cm2/ V·s, an IonIoff ratio of ∼105, and a subthreshold swing of ∼ 98 mV/dec, in surface-channel GaAs MOSFETs with a gate length of 2 μm. © 2009 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83019||ISSN:||07413106||DOI:||10.1109/LED.2008.2010831|
|Appears in Collections:||Staff Publications|
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