Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2010831
Title: Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs
Authors: Chin, H.-C.
Zhu, M. 
Liu, X.
Lee, H.-K.
Shi, L.
Tan, L.-S. 
Yeo, Y.-C. 
Keywords: GaAs
High mobility
High-k
MOSFET
Surface passivation
Issue Date: 2009
Citation: Chin, H.-C., Zhu, M., Liu, X., Lee, H.-K., Shi, L., Tan, L.-S., Yeo, Y.-C. (2009). Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs. IEEE Electron Device Letters 30 (2) : 110-112. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2010831
Abstract: A novel surface passivation technology employing silane SiH4 and ammonia NH3 was demonstrated to realize high-quality metal-gate/high-k dielectric stack on GaAs. In addition to ex situ cleaning/passivation and in situ vacuum anneal to remove the native oxide on GaAs, the key improvements reported in this letter include the introduction of NH3 in a SiH4 passivation to form a SiN passivation layer that protects the GaAs surface from exposure to the oxidizing ambient during high- k dielectric deposition. Negligible As-O and Ga-O bonds were found. This passivation technology was integrated in a metal-organic chemical-vapor deposition tool. Inversion-type GaAs n-MOSFETs were fabricated with the SiH4 and NH3 passivation technology, showing good electrical characteristics with a peak effective mobility of 1920 cm2/ V·s, an IonIoff ratio of ∼105, and a subthreshold swing of ∼ 98 mV/dec, in surface-channel GaAs MOSFETs with a gate length of 2 μm. © 2009 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83019
ISSN: 07413106
DOI: 10.1109/LED.2008.2010831
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