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|Title:||N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide||Authors:||Lee, R.T.P.
Rare earth metal
|Issue Date:||Feb-2007||Citation:||Lee, R.T.P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C. (2007-02). N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide. IEEE Electron Device Letters 28 (2) : 164-167. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.889233||Abstract:||We have fabricated n-channel 25-nm gate length FinFETs with Schottky-barrier source and drain featuring a self-aligned ytterbium silicide (YbSi1.8). A low-temperature silicidation process was developed for the formation of the low electron barrier height YbSi1.8 phase, without reaction with SiO2 isolation or SiN spacer materials, enabling integration in a CMOS fabrication process flow. The fabricated device exhibits good device characteristics with a drive current of 241 μA/μ VDS = VGS Vt = 1 V, Ion/Ioff = 104 at VDS =1.1 subthreshold swing of 125 mV/ decade, and drain-induced barrier lowering of 0.26 V/V. © 2007 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82747||ISSN:||07413106||DOI:||10.1109/LED.2006.889233|
|Appears in Collections:||Staff Publications|
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