Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2011.2161259

Title:	Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics
Authors:	Tran, X.A. Yu, H.Y. Gao, B. Kang, J.F. Sun, X.W. Yeo, Y.-C. Nguyen, B.Y. Li, M.F.
Keywords:	HfOx resistive random access memory (RRAM) unipolar resistive switching
Issue Date:	Sep-2011
Citation:	Tran, X.A., Yu, H.Y., Gao, B., Kang, J.F., Sun, X.W., Yeo, Y.-C., Nguyen, B.Y., Li, M.F. (2011-09). Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics. IEEE Electron Device Letters 32 (9) : 1290-1292. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2161259
Abstract:	In this letter, a high-performance unipolar resistive random access memory with Ni electrode HfOx AlOyp+-Si substrate structure is reported. Compared with Ni HfOxp+-Si devices, a significant improvement in terms of switching parameters such as set/reset voltages, on/off resistance ratio, and resistance distribution is successfully demonstrated. It is believed that the stabilization of the conductive filament generation inside the switching HfOx film due to the AlOy incorporation plays a key role for the improved performance. © 2011 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82758
ISSN:	07413106
DOI:	10.1109/LED.2011.2161259
Appears in Collections:	Staff Publications

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