Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2008.920275
Title: | Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration | Authors: | Koh, A.T.-Y. Lee, R.T.-P. Liu, F.-Y. Liow, T.-Y. Tan, K.M. Wang, X. Samudra, G.S. Balasubramanian, N. Chi, D.-Z. Yeo, Y.-C. |
Keywords: | Laser anneal Mobility Series resistance Silicon-carbon Strain Transistors |
Issue Date: | May-2008 | Citation: | Koh, A.T.-Y., Lee, R.T.-P., Liu, F.-Y., Liow, T.-Y., Tan, K.M., Wang, X., Samudra, G.S., Balasubramanian, N., Chi, D.-Z., Yeo, Y.-C. (2008-05). Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration. IEEE Electron Device Letters 29 (5) : 464-467. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920275 | Abstract: | We report for the first time, the use of pulsed laser annealing (PLA) on multiple-gate field-effect transistors (MuGFETs) with silicon-carbon (Si1-xCx) source and drain (S/D) for enhanced dopant activation and improved strain effects. Si1-x Cx S/D exposed to consecutive laser irradiations demonstrated superior dopant activation with a ∼60% reduction in resistivity compared to rapid thermal annealed S/D. In addition, with the application of PLA on epitaxially grown Si0.99C 0.01, substitutional carbon concentration Csub increased from 1.0% (as grown) to 1.21%. This is also significantly higher than the Csub of 0.71% for rapid thermal annealed Si0.99 C0.01 S/D. With a higher strain and enhanced dopant activation, MuGFETs with laser annealed Si0.99C 0.01 S/D show a ∼53% drain-current improvement compared to MuGFETs with rapid thermal annealed Si0.99C0.01 S/D. © 2008 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82945 | ISSN: | 07413106 | DOI: | 10.1109/LED.2008.920275 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.