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|Title:||Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration||Authors:||Koh, A.T.-Y.
|Issue Date:||May-2008||Citation:||Koh, A.T.-Y., Lee, R.T.-P., Liu, F.-Y., Liow, T.-Y., Tan, K.M., Wang, X., Samudra, G.S., Balasubramanian, N., Chi, D.-Z., Yeo, Y.-C. (2008-05). Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration. IEEE Electron Device Letters 29 (5) : 464-467. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920275||Abstract:||We report for the first time, the use of pulsed laser annealing (PLA) on multiple-gate field-effect transistors (MuGFETs) with silicon-carbon (Si1-xCx) source and drain (S/D) for enhanced dopant activation and improved strain effects. Si1-x Cx S/D exposed to consecutive laser irradiations demonstrated superior dopant activation with a ∼60% reduction in resistivity compared to rapid thermal annealed S/D. In addition, with the application of PLA on epitaxially grown Si0.99C 0.01, substitutional carbon concentration Csub increased from 1.0% (as grown) to 1.21%. This is also significantly higher than the Csub of 0.71% for rapid thermal annealed Si0.99 C0.01 S/D. With a higher strain and enhanced dopant activation, MuGFETs with laser annealed Si0.99C 0.01 S/D show a ∼53% drain-current improvement compared to MuGFETs with rapid thermal annealed Si0.99C0.01 S/D. © 2008 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82945||ISSN:||07413106||DOI:||10.1109/LED.2008.920275|
|Appears in Collections:||Staff Publications|
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