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|Title:||Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts||Authors:||Tong, Y.
|Keywords:||Nickel germanide (NiGe)
Schottky barrier height
|Issue Date:||2012||Citation:||Tong, Y., Liu, B., Lim, P.S.Y., Yeo, Y.-C. (2012). Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts. IEEE Electron Device Letters 33 (6) : 773-775. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2191760||Abstract:||In this letter, we report the demonstration of an effective electron Schottky barrier height (ΦB n) reduction technology for NiGe/n-type Germanium (n-Ge) contacts using ion implantation of selenium (Se) followed by its segregation at NiGe/n-Ge interface. Se was found to segregate at NiGe/n-Ge interface after germanide formation. Nickel monogermanide was formed using a 350 °C 30-s anneal. Se segregation gives ΦB n as low as ∼ 0.13 eV. © 2012 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83002||ISSN:||07413106||DOI:||10.1109/LED.2012.2191760|
|Appears in Collections:||Staff Publications|
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