Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2012.2191760

Title:	Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts
Authors:	Tong, Y. Liu, B. Lim, P.S.Y. Yeo, Y.-C.
Keywords:	Nickel germanide (NiGe) Schottky barrier height segregation selenium implant
Issue Date:	2012
Citation:	Tong, Y., Liu, B., Lim, P.S.Y., Yeo, Y.-C. (2012). Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts. IEEE Electron Device Letters 33 (6) : 773-775. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2191760
Abstract:	In this letter, we report the demonstration of an effective electron Schottky barrier height (ΦB n) reduction technology for NiGe/n-type Germanium (n-Ge) contacts using ion implantation of selenium (Se) followed by its segregation at NiGe/n-Ge interface. Se was found to segregate at NiGe/n-Ge interface after germanide formation. Nickel monogermanide was formed using a 350 °C 30-s anneal. Se segregation gives ΦB n as low as ∼ 0.13 eV. © 2012 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/83002
ISSN:	07413106
DOI:	10.1109/LED.2012.2191760
Appears in Collections:	Staff Publications

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