Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2012.2191760
| Title: | Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts | Authors: | Tong, Y. Liu, B. Lim, P.S.Y. Yeo, Y.-C. |
Keywords: | Nickel germanide (NiGe) Schottky barrier height segregation selenium implant |
Issue Date: | 2012 | Citation: | Tong, Y., Liu, B., Lim, P.S.Y., Yeo, Y.-C. (2012). Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts. IEEE Electron Device Letters 33 (6) : 773-775. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2191760 | Abstract: | In this letter, we report the demonstration of an effective electron Schottky barrier height (ΦB n) reduction technology for NiGe/n-type Germanium (n-Ge) contacts using ion implantation of selenium (Se) followed by its segregation at NiGe/n-Ge interface. Se was found to segregate at NiGe/n-Ge interface after germanide formation. Nickel monogermanide was formed using a 350 °C 30-s anneal. Se segregation gives ΦB n as low as ∼ 0.13 eV. © 2012 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/83002 | ISSN: | 07413106 | DOI: | 10.1109/LED.2012.2191760 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
32
checked on Aug 15, 2020
WEB OF SCIENCETM
Citations
36
checked on Aug 7, 2020
Page view(s)
115
checked on Aug 2, 2020
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.