Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2012.2191760
| Title: | Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts | Authors: | Tong, Y. Liu, B. Lim, P.S.Y. Yeo, Y.-C. |
Keywords: | Nickel germanide (NiGe) Schottky barrier height segregation selenium implant |
Issue Date: | 2012 | Citation: | Tong, Y., Liu, B., Lim, P.S.Y., Yeo, Y.-C. (2012). Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts. IEEE Electron Device Letters 33 (6) : 773-775. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2191760 | Abstract: | In this letter, we report the demonstration of an effective electron Schottky barrier height (ΦB n) reduction technology for NiGe/n-type Germanium (n-Ge) contacts using ion implantation of selenium (Se) followed by its segregation at NiGe/n-Ge interface. Se was found to segregate at NiGe/n-Ge interface after germanide formation. Nickel monogermanide was formed using a 350 °C 30-s anneal. Se segregation gives ΦB n as low as ∼ 0.13 eV. © 2012 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/83002 | ISSN: | 07413106 | DOI: | 10.1109/LED.2012.2191760 |
| Appears in Collections: | Staff Publications |
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